Small Signal Transistor NPN - Silicon Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 23 x 23 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 4.7 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å

Small Signal Transistor NPN - Silicon Darlington Transistor Chip

NPN - Darlington Transistor Die 0.3 Amp, 40 Volt

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封装/外壳：模具 包装：带盒（TB） 描述：TRANS NPN DARL 40V 0.3A DIE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Chip Form: Small Signal Darlington Central Semiconductor

NPN - Darlington Transistor Die 0.5 Amp, 60 Volt

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NPN - Darlington Transistor Die 0.5 Amp, 60 Volt

文件：462.81 Kbytes Page：4 Pages

Chip Form: Small Signal Darlington Central Semiconductor

NPN - Darlington Transistor Die 0.5 Amp, 60 Volt

文件：462.78 Kbytes Page：4 Pages

封装/外壳：模具 包装：带盒（TB） 描述：TRANS NPN DARL 60V 0.5A DIE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN - Darlington Transistor Die 0.5 Amp, 50 Volt

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NPN - Darlington Transistor Die 0.5 Amp, 30 Volt

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NPN - Darlington Transistor Die 0.5 Amp, 60 Volt

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Socket terminal strip Screw connection, with raised base

The socket terminal strip 327-FU with raised base and a pitch of 14,5 mm is available in 1 to 12 pole design. The raised base extends the creepage distance to the ground which allows 600 V in accordance with UL and CSA regulations without an additional insulating base. One fixing hole is locat

Jumper Accessories

The jumper 327-J electrically bridges adjacent poles of series 326 and 327 terminals. It is available in 14 mm pitch with 2 to 12 poles. Just like the lead, it is connected to the clamping units. The jumper shell is insulated.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis

Socket terminal strip Screw connection

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Crystal Clock Oscillators

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