Power Transistor NPN - Low Saturation Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.4 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ag - 12,000Å

Power Transistor NPN - Low Saturation Transistor Chip

Power Transistor NPN - Low Saturation Transistor Chip

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Military Grade Ethernet Switch On Board (ESoB)

PRODUCT DESCRIPTION One of the most exciting advancement in technology over the last decade has been unmanned vehicles i n cluding: • Unmanned aerial vehicles (UAVs) or Drones • Land autonomous vehicles (UGVs) • Robots • Other unmanned support vehicles These vehicles must be agile, compact

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Measure Earth Resistance (20/200/2000廓 ranges)

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Guard ring for enhanced ruggedness and long term reliability

文件：164.92 Kbytes Page：4 Pages

Guard ring for enhanced ruggedness and long term reliability

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