Small Signal Transistor NPN - High Voltage Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 4.9 x 4.9 MILS Emitter Bonding Pad Area 6.4 x 6.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 16,000Å

运算放大器

MONROE 257D

TYPICAL APPLICATIONS  Monitor charge build-up on webs during lamination, coating, manufacturing, printing  Check bonding during bagging, dumping, transport operations  Static surveys in offices, on production lines,“static-free” workstations  Prevention of dendritic discharge patterns on

Blade Terminal & Special Purpose Fuses -Low Voltage

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MAGNETIC-LATCHING DPDT HALF-SIZE CRYSTAL CAN MILITARY RELAY

文件：1.11117 Mbytes Page：3 Pages

Precise temperature control

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256b/257b Transcoding for 100 Gb/s Backplane and Copper Cable

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