Small Signal Transistor NPN - Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 2.7 x 2.7 MILS Emitter Bonding Pad Area 2.7 x 2.7 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 6,000Å

Small Signal Transistor NPN - Saturated Switch Transistor Chip

TRANSHIELLD CP2000 SERIES

TRANSHIELLD CP2000 SERIES

Small Signal Transistor NPN - Saturated Switch Transistor Chip

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Chip Form: High Speed Switching Trans.

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(CP2000 Serise) Transhield

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

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