Small Signal Transistor NPN - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 8.0 x 8.0 MILS Emitter Bonding Pad Area 7.6 x 7.6 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 10,000Å

Chip Form: Amplifier/Switch Transistor

P-Channel JFET Die

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PNP - High Voltage Transistor Die

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P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Chip Form: Amplifier/Switch Transistor

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL195 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

16-Bit, 85ksps ADC with 10uA Shutdown

General Description The MAX195 is a 16-bit successive-approximation analog-to-digital converter (ADC) that combines high speed, high accuracy, low power consumption, and a 10µA shutdown mode. Internal calibration circuitry corrects linearity and offset errors to maintain the full rated performanc

16-Bit, 85ksps ADC with 10uA Shutdown

General Description The MAX195 is a 16-bit successive-approximation analog-to-digital converter (ADC) that combines high speed, high accuracy, low power consumption, and a 10µA shutdown mode. Internal calibration circuitry corrects linearity and offset errors to maintain the full rated performanc

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Ultra Reliable Power Transistors

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