Small Signal Transistor NPN - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

Small Signal Transistor NPN - Amp/Switch Transistor Chip

Small Signal Transistors NPN - Amp Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

Aluminum Electrolytic Capacitors SMD (Chip), High Voltage

FEATURES • Extended useful life: up to 2500 h at 125 °C • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free reflow solderable • Charge and discharge proof, no peak current limitation • Advanced temperature reflow s

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Temperature Sensors Line Guide

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Aluminum Electrolytic Capacitors SMD (Chip), High Voltage

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Mini, Soft Tip

文件：1.0239 Mbytes Page：8 Pages