P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V

丝印代码：KB；240 V, P-channel vertical D-MOS transistor

1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits • Direct interface to Complementary (C-MOS) transitor and Transisto

P-Channel SIPMOS Small-Signal Transistor

P沟道增强模式场效应晶体管 (FET)，-250 V，SOT-89

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

SIPMOS Small-Signal-Transistor

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SIPMOS Small-Signal-Transistor

文件：301.17 Kbytes Page：8 Pages

SIPMOS Small-Signal-Transistor

文件：301.17 Kbytes Page：8 Pages

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ)

Silicon Complementary Transistors Audio Power Output

Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE