Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

Programmable logic array 22 횞 42 횞 10

DESCRIPTION The PLS173 is a two-level logic element consisting of 42 AND gates and 10 OR gates with fusible link connections for programming I/O polarity and direction. All AND gates are linked to 12 inputs (I) and 10 bidirectional I/O lines (B). These yield variable I/O gate configurations

Programmable logic arrays 22 횞 42 횞 10

DESCRIPTION The PLUS173 PLDs are high speed, combinatorial Programmable Logic Arrays. The Philips Semiconductors state-of-the-art Oxide Isolated Bipolar fabrication process is employed to produce propagation delays as short as 12ns. FEATURES • I/O propagation delays (worst case) – PLUS173B

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The PPG173TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 25 mA low current operation. It is housed in a very small 6 pin mini-mold package available on