35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC

封装/外壳：440213 包装：托盘 描述：GAN MMIC 35W 28V 9.0-10.0GHZ RF/IF，射频/中频和 RFID 射频放大器

35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

35 W, 9.0 - 10 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a compact, 6-l

35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

包装：散装 描述：CMPA901A035F DEVELOPMENT BOARD 开发板，套件，编程器 射频评估和开发套件，开发板