Description

The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers

35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.

The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25

mm x 9.9 mm metal/ceramic flanged package. It offers high gain and

superior efficiency in a small footprint package at 50 ohms.

Features

• 35 W Typical PSAT

• >33 Typical Power Added Efficiency

• 22.5 dB Large Signal Gain

• High Temperature Operation

Note: Features are typical performance across

frequency under 25°C operation. Please reference

performance charts for additional details.

Applications

• Military Radar

• Marine Radar

• Weather Radar

• Medical Applications