位置：首页 > IC中文资料 > CMPA5585030D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMPA5585030D | 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri | WOLFSPEED |   | |
CMPA5585030D | 30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier 文件：453.35 Kbytes Page：9 Pages | Cree 科锐 | | |
CMPA5585030D | 封装/外壳：模具 包装：托盘 描述：IC AMP 5.5GHZ-8.5GHZ 30W RF/IF，射频/中频和 RFID 射频放大器 | WOLFSPEED | | |
CMPA5585030D | 30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier | MACOM | | |
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri | WOLFSPEED | | ||
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier 文件：1.06639 Mbytes Page：17 Pages | Cree 科锐 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
23+ |
假一赔十 |
30000 |
代理全新原装现货,价格优势 |
|||
CREE |
23+ |
NA |
2009 |
原装正品实单必成 |
|||
SMC |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
CREE |
三年内 |
1983 |
只做原装正品 |
||||
CREE |
23+ |
DIE |
6500 |
专注配单,只做原装进口现货 |
|||
CREE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
|||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CREE |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
CREE |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
CMPA5585030D芯片相关品牌
CMPA5585030D规格书下载地址
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CMPA5585030D数据表相关新闻
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原装现货
2019-9-27
DdatasheetPDF页码索引
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