Description

Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs

also offer greater power density and wider bandwidths compared to Si

and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic

flanged package for optimal electrical and thermal performance.

Features

• 25 dB Small Signal Gain

• 30 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 1.00 x 0.385 inches

Applications

• Point to Point Radio

• Communications Radar

• Satellite Communication Uplink