N-沟道 VDMOS系列

N-沟道 VDMOS系列

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

N-CHANNEL POWER MOSFET

文件：460.3 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：486.21 Kbytes Page：10 Pages

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes Page：9 Pages