T-3 1/4 Miniature Bayonet Base

T-3 1/4 Miniature Bayonet Base

Miniature Bayonet Base

文件：52.4 Kbytes Page：1 Pages

陶瓷电容器

常规型产品广泛用于民用电器与工业设备。 ・尺寸丰富，小型0.4x0.2mm到3.2x2.5mm，一应俱全。\n・针对客户用途，组合温度特性、额定电压与包装方法等项目。;

陶瓷电容器

常规型产品广泛用于民用电器与工业设备。 ・尺寸丰富，小型0.4x0.2mm到3.2x2.5mm，一应俱全。\n・针对客户用途，组合温度特性、额定电压与包装方法等项目。;

陶瓷电容器

常规型产品广泛用于民用电器与工业设备。 ・尺寸丰富，小型0.4x0.2mm到3.2x2.5mm，一应俱全。\n・针对客户用途，组合温度特性、额定电压与包装方法等项目。;

封装/外壳：1206（3216 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10UF 10V X5R 1206 电容器 陶瓷电容器

封装/外壳：1206（3216 公制） 包装：剪切带（CT）带盒（TB） 描述：CAP CER 10UF 16V X5R 1206 电容器 陶瓷电容器

High-speed diodes

DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • G

High-speed diode

DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage:

BROADBAND RF POWER TRANSISTOR NPN SILICON

80 W, 3.0 – 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large–signal output amplifier stages in the 30– 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 1

Silicon NPN Transistor High Gain, Low Noise Amp

Features: • High Current Gain–Bandwidth Product • Low Noise Figure • High Power Gain

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages