位置:首页 > IC中文资料第266页 > CL170YGCDT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS FET Switching(N-Channel-Enhancement) TMOS FET Switching N–Channel — Enhancement | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 |
CL170YGCDT产品属性
- 类型
描述
- 型号
CL170YGCDT
- 制造商
Panasonic Industrial Company
- 功能描述
LED
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Rochester |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
CL170YGCDT规格书下载地址
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CL170YGCDT数据表相关新闻
CL1112 CHIPLINK
www.hfxcom.com
2021-11-3CL112A104J0701
属性 参数值 商品目录 聚酯薄膜电容 脚间距(mm) 7 精度 ±5%_ 容值 100nF 额定直流耐压DC 100V 工作温度 -40℃ ~ +85℃
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DdatasheetPDF页码索引
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