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型号 功能描述 生产厂家 企业 LOGO 操作
CKE2009

3W Audio Power Amplifier with Off Mode

Key Features: ■ Output power under different load conditions with 10% distortion and a 1kHz input signal: · 3 ohms, 3W (typical) · 4 ohms, 2.5W (typical) · 8 ohms load, 1.5W (typical). ■ Standby current: 0.6µA ■ Operating voltage: 2.0-5.5V. ■ Maximum distortion of 0.5% under conditi

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RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4400 V Mean forward current 1560 A Surge current 18.5 kA

POSEICO

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

PHILIPS

飞利浦

NPN microwave power transistors

DESCRIPTION The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. FEATURES • Diffused emitter ballasting resistors • Self-aligned process

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FREE

STMICROELECTRONICS

意法半导体

10 10W STEREO AMPLIFIER

DESCRIPTION The TDA2009A is class AB dual Hi-Fi Audio power amplifier assembled in Multiwatt package, specially designed for high quality stereo application as Hi-Fi and music centers. ■ HIGH OUTPUT POWER (10 + 10W Min. @ D = 1) ■ HIGH CURRENT CAPABILITY (UP TO 3.5A) ■ AC SHORT CIRCUIT PRO

STMICROELECTRONICS

意法半导体

更新时间:2026-7-23 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CKE
23+
SOP-8
926177
原厂授权一级代理,专业海外优势订货,价格优势、品种
CKE
07+
SOP8
984
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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