型号 功能描述 生产厂家 企业 LOGO 操作
CJD02N65

N-Channel Power MOSFET

文件:1.29804 Mbytes Page:4 Pages

JIANGSU

长电科技

CJD02N65

N-Channel MOSFET

JSCJ

长晶科技

Plastic-Encapsulate MOSFETS

文件:681.64 Kbytes Page:3 Pages

ZPSEMIZP Semiconductor

至尚臻品

Plastic-Encapsulate MOSFETS

文件:725.72 Kbytes Page:3 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126F package. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

更新时间:2025-12-25 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
2016
TO-251S
45000
CJ/长电
25+
TO-251S
20300
CJ/长电原装特价CJD02N65即刻询购立享优惠#长期有货
CJ/长电
21+
TO-251S
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-251S
24019
绝对原装正品全新进口深圳现货
CJ/长电
23+
TO-251
303000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CJ/长电
24+
TO-251S
50000
只做原装,欢迎询价,量大价优
CJ/长电
25+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
长电
23+
TO-251S
7300
专注配单,只做原装进口现货
CJ/长电
2022+
TO-252
32500
原厂代理 终端免费提供样品
CJ/长电
24+
TO-251S
50000
全新原装,一手货源,全场热卖!

CJD02N65数据表相关新闻