20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c