型号 功能描述 生产厂家&企业 LOGO 操作
ZXT10P20DE6TC

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

Zetex

ZXT10P20DE6TC

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

DIODES

美台半导体

ZXT10P20DE6TC

封装/外壳:SOT-23-6 包装:卷带(TR) 描述:TRANS PNP 20V 2.5A SOT26 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

DIODES

美台半导体

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

Zetex

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

Zetex

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

DIODES

美台半导体

ZXT10P20DE6TC产品属性

  • 类型

    描述

  • 型号

    ZXT10P20DE6TC

  • 功能描述

    两极晶体管 - BJT 20V PNP SuperSOT4

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-16 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
23+
SOT-23-6
50000
全新原装正品现货,支持订货
ZETEX
24+
SOT-23-6
6010
只做原装正品
DIODES/美台
24+
SOT23
990000
明嘉莱只做原装正品现货
DIODES/美台
1942+
SOT23-6
9852
只做原装正品现货或订货!假一赔十!
NK/南科功率
2025+
SOT-26
986966
国产
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
24+
NA/
13145
原装现货,当天可交货,原型号开票
DIODES/美台
24+
SOT23-6
9600
原装现货,优势供应,支持实单!
ZETEX
25+
SOT23-6
4500
全新原装、诚信经营、公司现货销售
DIODES/美台
22+
SOT23
12000
只做原装、原厂优势渠道、假一赔十

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