位置：首页 > IC中文资料第147页 > ZXT10P20DE6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXT10P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex |   | |
ZXT10P20DE6TC | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c | DIODES 美台半导体 | | |
ZXT10P20DE6TC | 封装/外壳：SOT-23-6 包装：卷带（TR） 描述：TRANS PNP 20V 2.5A SOT26 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | |
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c | DIODES 美台半导体 | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res | Zetex | | ||
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c | DIODES 美台半导体 | |
ZXT10P20DE6TC产品属性
- 类型
描述
- 型号
ZXT10P20DE6TC
- 功能描述
两极晶体管 - BJT 20V PNP SuperSOT4
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
13145 |
原装现货,当天可交货,原型号开票 |
|||
DIODES/美台 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
DIODES/美台 |
24+ |
SOT23 |
990000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
20+ |
SOT23 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
ZETEX |
2016+ |
SOT23-6 |
829 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
2023+ |
SOT23-6 |
2800 |
一级代理优势现货,全新正品直营店 |
|||
Zetex Semiconductors |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
DIODES/美台 |
23+ |
SOT236 |
6000 |
原装正品假一罚百!可开增票! |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
ZXT10P20DE6TC规格书下载地址
ZXT10P20DE6TC参数引脚图相关
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DdatasheetPDF页码索引
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