Dual N Channel MOSFET

RS232/423 Low Cap, #24-10c, FPE, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy

Dual P-Channel Enhancement Mode MOSFET

Features • -20V/-6A , RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Sy