Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 4.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

Dual N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Power MOSFET

Description The 4946 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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VHB™ Tape Specialty Tapes

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

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