GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

GaAs MMIC ● Dual band GSM/PCN power amplifier ● 35dBm / 34dBm output power at 3.5 V ● Two amplifiers in a single package ● Power ramp control

GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES ● High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm ● High power gain Gp=20dB(TYP.) @f=1.9GHz ● High power added efficiency hadd=45(TYP.) @f=1.9GHz,Pin=8dBm ● He

GaAs SP16T

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N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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L & S BAND GaAs FET

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