10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

封装/外壳：440166 包装：散装 描述：RF MOSFET HEMT 28V 440166 分立半导体产品 晶体管 - FET，MOSFET - 射频

10-W RF Power GaN HEMT

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c

10 W, DC - 8 GHz, RF Power GaN HEMT

Description Wolfspeed’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gai

包装：盒 描述：CG2H40010F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

10-W RF Power GaN HEMT

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth c