P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -62A, RDS(ON) = 8.4 mW @VGS = -10V. RDS(ON) = 13.5 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -61A, RDS(ON) = 9 mW @VGS = -10V. RDS(ON) = 13 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Nch 100V 80A Power MOSFET

Features Low on-resistance Pb-free plating;RoHS compliant 100% Avalanche tested AEC-Q101 qualified Application ADAS/Info./Lighting/Body

Nch 100V 80A Power MOSFET

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