型号 功能描述 生产厂家&企业 LOGO 操作
CEZ10R10AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 65A, RDS (ON) = 9.4 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 14 mW @VGS = 4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 64A, RDS (ON) = 9.6 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS (ON) = 15.5 mW @VGS = 6V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Ch Trench MOSFET

文件:467.56 Kbytes Page:8 Pages

KODENSHI

可天士

N-Ch Trench MOSFET

文件:467.95 Kbytes Page:8 Pages

KODENSHI

可天士

更新时间:2025-8-7 12:00:00
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2511
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2025+
DFN5060-8
986966
国产
CET/華瑞
23+
PR-PACK5x6
141980
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
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62000
一级代理-主营优势-实惠价格-不悔选择
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20+
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120000
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TOSHIBA
24+
con
20
现货常备产品原装可到京北通宇商城查价格
Toshiba
2025+
SOD-523-2
12420
TOSHIBA
20

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