| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,45A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=18mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,45A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=18mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE25VoltsCURRENT38Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 |  | | |
VCE=650V,IC=15ATrenchFieldStopIGBT 文件：394.66 Kbytes Page：12 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 |  | | |
TrenchFieldStopIGBTswithFastRecoveryDiode 文件：768.65 Kbytes Page：15 Pages | SankenSanken Electric Co Ltd. 三垦日本三垦 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
T0-263 |
15500 |
||||
VBsemi |
2023+ |
TO263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
JINGDAO/晶导微 |
23+ |
SOD-123 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET |
2105+ |
TO-263 |
12000 |
原装正品 |
|||
CET |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
VBsemi |
2211+ |
TO263 |
6294 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VBsemi/台湾微碧 |
21+ |
T0-263 |
1130 |
原装现货假一赔十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
CET/華瑞 |
23+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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