| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,25A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,20A,RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
PrivacyMaskFunction 文件：151.66 Kbytes Page：2 Pages | A1PROS A1 PROs co., Ltd. |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
太友 |
24+ |
N/A |
9000 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
24+ |
NA/ |
49600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-263 |
140 |
原装正品,假一罚十! |
|||
CET/華瑞 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET |
24+ |
TO263 |
4800 |
||||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ADI |
23+ |
N/A |
7000 |
||||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
CET/華瑞 |
01+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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