PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. T

1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS

DESCRIPTION The H21A_ and H22A_ series of opaque photointerrupters are single channel switches consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling e

SLOTTED OPTICAL SWITCH

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封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT PHOTOTRAN PC PIN 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

封装/外壳：开槽，PC 引脚 包装：散装 描述：SENSOR OPT SLOT NPN PC PINS 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

SLOTTED OPTICAL SWITCH

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.