N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 62A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 53A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

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