N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 600 Volts CURRENT 4 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：827.09 Kbytes Page：4 Pages

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：827.09 Kbytes Page：4 Pages