| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 3.4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | |
CEU04N6 | N-Channel MOSFET uses advanced trench technology 文件：1.5619 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
CEU04N6 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 3.1A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. | CET-MOS 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.28974 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. | CHENMKO 力勤 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：827.09 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：827.09 Kbytes Page：4 Pages | CET 华瑞 | |
CEU04N6产品属性
- 类型
描述
- BVDSS(V)：
600
- Rds(on)mΩ@10V：
2400
- ID(A)：
3.4
- Qg(nC)@10V(typ)：
12
- RθJC(℃/W)：
1.8
- Pd(W)：
70
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
09+ |
TO-252 |
2512 |
全新 发货1-2天 |
|||
CET |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
CET/華瑞 |
23+ |
TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
TO-252 |
5000 |
专注配单,只做原装进口现货 |
|||
CET |
15+ |
TO-252 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
25+ |
TO-252 |
90000 |
全新原装现货 |
|||
CET/華瑞 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET/華瑞 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
25+ |
TO-252 |
20000 |
现货 |
|||
CET |
22+ |
TO252 |
50000 |
一级代理,放心购买! |
CEU04N6规格书下载地址
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DdatasheetPDF页码索引
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