| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 3.4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
CEU04N6 | N-Channel MOSFET uses advanced trench technology 文件：1.5619 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 3.1A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.28974 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 3.4A, RDS(ON) = 2.4W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：827.09 Kbytes Page：4 Pages | CET 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-252 |
5000 |
原装正品,假一罚十! |
|||
CET |
1822+ |
SOT-252 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CET |
15+ |
TO-252 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
21+ |
TO-252 |
20000 |
原装现货假一赔十 |
|||
CET/华瑞 |
25+23+ |
TO-252 |
23133 |
绝对原装正品全新进口深圳现货 |
|||
CET |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
CET |
22+ |
TO-252 |
159353 |
原装正品现货,可开13个点税 |
|||
CET/華瑞 |
23+ |
TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/华瑞 |
24+ |
TO-252 |
30980 |
原装现货/放心购买 |
CEU04N6规格书下载地址
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DdatasheetPDF页码索引
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