| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 |   | |
CEP04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：827.09 Kbytes Page：4 Pages | CET 华瑞 | | |
CEP04N6 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. | CET-MOS 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2.5A , RDS(ON)=2.5Ω@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 4 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. | CHENMKO 力勤 | | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：827.09 Kbytes Page：4 Pages | CET 华瑞 | |
CEP04N6产品属性
- 类型
描述
- BVDSS(V)：
600
- Rds(on)mΩ@10V：
2400
- ID(A)：
4.2
- Qg(nC)@10V(typ)：
13
- RθJC(℃/W)：
1.2
- Pd(W)：
104
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
4509 |
||||
CET |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
CET |
06+ |
TO-220 |
1437 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
25+ |
TO-220 |
90000 |
全新原装现货 |
|||
CET/華瑞 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
AD |
25+ |
TO220/3 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
CEP04N6规格书下载地址
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DdatasheetPDF页码索引
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