N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

N-Channel MOSFET uses advanced trench technology

文件：1.28974 Mbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 3.1A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.

MOSFET 650V, 4A N-CHANNEL

FEATURE • RDS(ON),typ.=2.1 Ω@VGS=10V • High Current Rating • Lower Capacitance • Lower Total Gate Charge Minimize Switching Loss • Fast Recovery Body Diode DESCRIPTION The AM04N65 is available in TO220F Package. APPLICATION • Adaptor • Charger • SMPS Standby Power

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 3.2A, RDS(ON) = 2.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

N-Channel 650 V (D-S) MOSFET

文件：1.97664 Mbytes Page：9 Pages