型号 功能描述 生产厂家 企业 LOGO 操作
CEU02N9

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

CEU02N9

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 900V, 2A, RDS(ON) = 6.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

CEU02N9

N-Channel MOSFET uses advanced trench technology

文件:960.55 Kbytes Page:5 Pages

DOINGTER

杜因特

CEU02N9

N Channel MOSFET

CET

华瑞

Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

BALLUFF

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 900V, 2A, RDS(ON) = 6.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件:1.54046 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件:1.24838 Mbytes Page:4 Pages

DOINGTER

杜因特

更新时间:2026-3-13 15:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
23+
TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
2026+
TO-252
47
原装正品,假一罚十!
CET/華瑞
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
CET/華瑞
20+
TO-252
7500
现货很近!原厂很远!只做原装
CET/华瑞
25+23+
TO-252
23133
绝对原装正品全新进口深圳现货
CET/华瑞
24+
TO-252
30980
原装现货/放心购买
TDK
24+
N/A
18766
公司现货库存,支持实单
CET
25+
TO-252
30000
代理全新原装现货,价格优势
CET
15+
TO-252
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
2022+
TO-252
50000
原厂代理 终端免费提供样品

CEU02N9数据表相关新闻