| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU01N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU01N6 | N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | |
CEU01N6产品属性
- 类型
描述
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
10500
- ID(A)：
1.2
- Qg(nC)@10V(typ)：
5.8
- RθJC(℃/W)：
3.5
- Pd(W)：
35.7
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
TO-252 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
WESTERN DIGITAL |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
CET |
25+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
|||
SR |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
|||
CET/華瑞 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
CET/華瑞 |
2022+ |
TO-252 |
3250 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
25+ |
TO-252 |
90000 |
全新原装现货 |
|||
CET/華瑞 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
CEU01N6规格书下载地址
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DdatasheetPDF页码索引
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