| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU01N65 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 |   | |
CEU01N65 | N Channel Product | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ | CET 华瑞 | |
CEU01N65产品属性
- 类型
描述
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
10500
- ID(A)：
1.2
- Qg(nC)@10V(typ)：
5.8
- RθJC(℃/W)：
3.5
- Pd(W)：
35.7
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
美格纳 |
23+ |
DPAK |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET/華瑞 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
WESTERN DIGITAL |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
CET |
25+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET |
TO-252 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET/華瑞 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
|||
CET |
22+ |
TO252 |
50000 |
一级代理,放心购买! |
|||
SR |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
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CEU01N65规格书下载地址
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DdatasheetPDF页码索引
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