| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU01N6A | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   |
InductiveSensors BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2 | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：85.87 Kbytes Page：4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET |
25+ |
TO-252 |
59 |
原装正品,假一罚十! |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
WESTERN DIGITAL |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
CET |
TO-252 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SR |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
|||
CET/華瑞 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
C |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
CET |
24+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
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DdatasheetPDF页码索引
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