P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.3A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead-free plating ; RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

丝印代码：9435TFCYWP；SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

20V P-Channel Increased MOS FET

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P-Channel 30-V (D-S) MOSFET

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MACHINE SCREW PAN PHILLIPS 10-32

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