N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 3.7A, RDS(ON)=100mΩ @ VGS=10V. RDS(ON)=120mΩ @ VGS=4.5V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

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