N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

N Channel MOSFET

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2361: RDS (on) = 0.9 Ω MAX. (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω MAX. (VGS = 10

SWITCH-MODE TRANSFORMER GUIDE

CONSUMER PRODUCTS Pulse offers a complete range of Switch-Mode Transformers in various technologies (slot, layer and triple insulation wire) used for power supplies in television, set-top boxes, satellite receivers, DVD players, telephone chargers, and white goods. Pulse also offers a new range o

Nylon Hose Clamps

文件：116.22 Kbytes Page：1 Pages

2A 550k/1.1MHz Synchronous PWM/PSM

文件：275.41 Kbytes Page：10 Pages

N-Channel 60-V (D-S) MOSFET

文件：311.62 Kbytes Page：5 Pages