N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -2.5A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

P Channel MOSFET

N Channel MOSFET

P Channel MOSFET

5 V-Powered CMOS RS-232 Drivers/Receivers

GENERAL DESCRIPTION The ADM2xx family of line drivers/receivers is intended for all EIA-232-E and V.28 communications interfaces, especially in applications in which 12 V is not available. The ADM236L and ADM241L feature a low power shutdown mode that reduces power dissipation to less than 5 µW,

5 V Powered CMOS RS-232 Drivers/Receivers

GENERAL DESCRIPTION The ADM2xx family of line drivers/receivers is intended for all EIA-232-E and V.28 communications interfaces, especially in applications where ±12 V is not available. The ADM223, ADM230L, ADM235L, ADM236L and ADM241L feature a low power shutdown mode that reduces power dissipa

Direct replacement for T1 쩐 Midget Flange SX6s

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5 V Powered CMOS RS-232 Drivers/Receivers

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5 V-Powered CMOS RS-232 Drivers/Receivers

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