N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 87A, RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 75A, RDS(ON) = 13mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

N Channel MOSFET

N-Channel MOSFET uses advanced trench technology

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TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P