位置:首页 > IC中文资料 > CEP75N06G

型号 功能描述 生产厂家 企业 LOGO 操作
CEP75N06G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

CET

华瑞

CEP75N06G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 75A, RDS(ON) = 13mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

CEP75N06G

N Channel MOSFET

CET

华瑞

CEP75N06G

N-Channel MOSFET uses advanced trench technology

文件:1.71031 Mbytes Page:5 Pages

DOINGTER

杜因特

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

ONSEMI

安森美半导体

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

ONSEMI

安森美半导体

CEP75N06G产品属性

  • 类型

    描述

  • BVDSS(V):

    60

  • Rds(on)mΩ@10V:

    13

  • ID(A):

    75

  • Qg(nC)@10V(typ):

    52

  • RθJC(℃/W):

    1

  • Pd(W):

    150

  • Configuration:

    Single

  • Polarity:

    N

更新时间:2026-8-2 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
25+
TO-220
10065
原装正品,有挂有货,假一赔十
CET/華瑞
23+
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET/華瑞
23+
TO-220
50000
全新原装正品现货,支持订货
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO2203
6734
CET
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET
06+
TO-220
2010
全新 发货1-2天
SR
23+
TO-220
5000
原装正品,假一罚十
CET
2025+
TO2203
3550
全新原厂原装产品、公司现货销售
CET/華瑞
20+
TO-220
300000
现货很近!原厂很远!只做原装

CEP75N06G数据表相关新闻