| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP75N06G | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package. | CET 华瑞 | ||
CEP75N06G | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | ||
CEP75N06G | N Channel MOSFET | CET 华瑞 | ||
CEP75N06G | N-Channel MOSFET uses advanced trench technology 文件:1.71031 Mbytes Page:5 Pages | DOINGTER 杜因特 | ||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 | |||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 |
CEP75N06G产品属性
- 类型
描述
- BVDSS(V):
60
- Rds(on)mΩ@10V:
13
- ID(A):
75
- Qg(nC)@10V(typ):
52
- RθJC(℃/W):
1
- Pd(W):
150
- Configuration:
Single
- Polarity:
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
25+ |
TO-220 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
CET/華瑞 |
23+ |
TO |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
6734 |
||||
CET |
21+ |
TO-220 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
06+ |
TO-220 |
2010 |
全新 发货1-2天 |
|||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET |
2025+ |
TO2203 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
CET/華瑞 |
20+ |
TO-220 |
300000 |
现货很近!原厂很远!只做原装 |
CEP75N06G规格书下载地址
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DdatasheetPDF页码索引
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