N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

MOSFET650V,20AN-CHANNEL

FEATURE •ProprietaryNewPlanarTechnology •RDS(ON),typ.typ.=0.38Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS •Adaptor •TVMainPower •SMPSPowerSupply •LCDPanel

20A650VN-channelenhancementmodefieldeffecttransistor

文件：891.65 Kbytes Page：6 Pages

20Amps,650VoltsN-CHANNELMOSFET

文件：481.89 Kbytes Page：7 Pages