型号 功能描述 生产厂家 企业 LOGO 操作
CEP140N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead-free plating ; RoHS compliant.

CET

华瑞

CEP140N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

CEP140N10

N-Channel MOSFET uses advanced trench technology

文件:1.63854 Mbytes Page:5 Pages

DOINGTER

杜因特

CEP140N10

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 150A, RDS(ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-3P package. RoHS compliant.

CET-MOS

华瑞

更新时间:2026-1-28 22:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
24+
QFN
9987
公司现货库存,支持实单
VBsemi
21+
TO220
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VB
2026+
TO-220
320
原装正品,假一罚十!
CET/华瑞
TO-220
8301
一级代理 原装正品假一罚十价格优势长期供货
VBsemi
24+
TO220
18000
原装正品 有挂有货 假一赔十
CET
26+
VQFN-16
86720
全新原装正品价格最实惠 承诺假一赔百
SR
23+
TO-220
5000
原装正品,假一罚十
ITWPANCON
24+
65200
CET/華瑞
20+
TO-220
7500
现货很近!原厂很远!只做原装
CET(华瑞)
2447
TO-220(TO-220-3)
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期

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