位置：首页 > IC中文资料第9974页 > CEP14
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,137A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,137A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Lead-freeplating;RoHScompliant. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications SynchronousRectificationforSMPS. BatteryProtectionCircuit. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■40V,180A,RDS(ON)=5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V,180A,RDS(ON)=5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■40V,140A,RDS(ON)=3.6mΩ@VGS=10V. RDS(ON)=6.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel MOSFET uses advanced trench technology 文件：1.63854 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | | |
N-Channel Enhancement Mode Field Effect Transistor 文件：441.29 Kbytes Page：4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
CEP14产品属性
- 类型
描述
- 型号
CEP14
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/华瑞 |
TO-220 |
8301 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
PANDUIT |
新 |
4191 |
全新原装 货期两周 |
||||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
CET/華瑞 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
CET/華瑞 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
GC |
24+ |
SMD |
8500 |
进口原装假一赔百,现货热卖 |
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