位置：首页 > IC中文资料第9974页 > CEP14
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead-free plating ; RoHS compliant. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Synchronous Rectification for SMPS. Battery Protection Circuit. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered. | CET-MOS 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.63854 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：441.29 Kbytes Page：4 Pages | CET 华瑞 | |
CEP14产品属性
- 类型
描述
- 型号
CEP14
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
QFN |
9987 |
公司现货库存,支持实单 |
|||
CET/華瑞 |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VB |
25+ |
TO-220 |
320 |
原装正品,假一罚十! |
|||
CET/华瑞 |
TO-220 |
8301 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
PANDUIT |
新 |
4191 |
全新原装 货期两周 |
||||
CET |
25+ |
VQFN-16 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
SR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
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