型号 功能描述 生产厂家 企业 LOGO 操作
CEP04N7A

N Channel MOSFET

CET

华瑞

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:132.54 Kbytes Page:4 Pages

CET

华瑞

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
24+
NA/
3508
原装现货,当天可交货,原型号开票
TI
24+
VQFN36
6512
公司现货库存,支持实单
CET
25+
TO-220
358
原装正品,假一罚十!
CET
25+
TO-220
8000
只有原装
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET/華瑞
23+
TO-220
145731
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
24+
TO-220
5000
全新原装正品,现货销售
CET
24+
TO2203
519
CET
23+
TO-220
10065
原装正品,有挂有货,假一赔十
SR
23+
TO-220
5000
原装正品,假一罚十

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