| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP02N9 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. | CET 华瑞 |   | |
CEP02N9 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | |
Single-Ended Cordsets Basic features Approval/Conformity CE cULus EAC WEEE | Balluff 巴鲁夫 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 900V, 2A, RDS(ON) = 6.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.54046 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.24838 Mbytes Page：4 Pages | DOINGTER 杜因特 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
22 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-220 |
1437 |
原装正品,假一罚十! |
|||
CET/華瑞 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
875 |
||||
CET |
1932+ |
TO-220 |
318 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
TI |
24+ |
QFN |
6618 |
公司现货库存,支持实单 |
|||
CET |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
CET/華瑞 |
2022+ |
TO-220 |
50000 |
原厂代理 终端免费提供样品 |
CEP02N9规格书下载地址
CEP02N9参数引脚图相关
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DdatasheetPDF页码索引
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