Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. Lead free product is acquired.

N+P Power MOSFET

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 5V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. RDS(ON) = 180mW @VGS = 10V. Lead-free plating ; RoHS compliant.

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plati

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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