Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 5V. RDS(ON) = 180mΩ @VGS = 10V. ■ -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plati

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 100V, 2.6A, RDS(ON) = 190mW @VGS = 5V. -100V, -2.0A, RDS(ON) = 320mW @VGS = -10V. RDS(ON) = 180mW @VGS = 10V. Lead-free plating ; RoHS compliant.

N-Channel and P-Channel MOSFET use advanced trench Technology

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150mA ULTRA-LOW QUIESCENT CURRENT LDO with ENABLE

Features Low VIN and Wide VIN Range: 2.0V to 5.25V Guarantee Output Current, 150mA Output Voltage Range: 1.2V to 4.5V VOUT Accuracy: ±1 Quiescent Current as Low as 0.25μA Typical Standby Current 0.02μA ESD Protection Exceeds JESD 22  Exceeds 4000V Human Body Model (A114)  Exceeds 400V M

Wire-Thread-Inserts

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Low Power Consumption LDO

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Common Mode Inductors/EMI Filters

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a step-down converter with integrated switching MOSFET

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