DualEnhancementModeFieldEffectTransistor

FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=5V. RDS(ON)=180mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mW@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplati

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=5V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. RDS(ON)=180mW@VGS=10V. Lead-freeplating;RoHScompliant.

N-ChannelandP-ChannelMOSFETuseadvancedtrenchTechnology

文件：2.66647 Mbytes Page：7 Pages

150mAULTRA-LOWQUIESCENTCURRENTLDOwithENABLE

Features LowVINandWideVINRange:2.0Vto5.25V GuaranteeOutputCurrent,150mA OutputVoltageRange:1.2Vto4.5V VOUTAccuracy:±1 QuiescentCurrentasLowas0.25μA TypicalStandbyCurrent0.02μA ESDProtectionExceedsJESD22 Exceeds4000VHumanBodyModel(A114) Exceeds400VM

CommonModeInductors/EMIFilters

文件：88.15 Kbytes Page：1 Pages

astep-downconverterwithintegratedswitchingMOSFET

文件：338.49 Kbytes Page：9 Pages

LTCCBandpassFilter

文件：309.07 Kbytes Page：2 Pages

LTCCBandpassFilter

文件：149.15 Kbytes Page：1 Pages